Sohom Kumar Mitra¹ and Moumita Mukherjee², ¹Sabita Devi Education Trust- Brainware group of Institutions, India and ²University of Calcutta, India

A very useful method of formulating the Total Thermal Resistance of ordinary mesa structure of DDR IMPATT diode oscillators are presented in this paper. The main aim of this paper is to provide a 2D model for Si and SiC based IMPATT having different heat sinks (Type IIA diamond and copper) at high power MMW frequency and study the characteristics of Total thermal resistance versus diode diameter for both the devices. Calculations of Total thermal resistances associated with different DDR IMPATT diodes with different base materials operating at 94 GHz (W-Band) are included in this paper using the author’s developed formulation for both type-IIA diamond and copper semi-infinite heat sinks separately. Heat Sinks are designed using both type-IIA diamond and copper for all those diodes to operate near 500 K (which is well below the burn-out temperatures of all those base materials) for CW steady state operation. Results are provided in the form of necessary graphs and tables.

IMPATT Diode, Junction Temperature, Lumped Analytical Model, Thermal Resistance, Heat sink